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Effect of mechanical strain on 1/f noise in metal-oxide semiconductor field-effect transistors

dc.contributor.authorLim, Ji-Song
dc.contributor.authorAcosta, Antonio
dc.contributor.authorThompson, Scott E.
dc.contributor.authorBosman, Gijs E.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorNishida, Toshikazu
dc.date.accessioned2021-10-18T00:03:33Z
dc.date.available2021-10-18T00:03:33Z
dc.date.issued2009
dc.identifier.issn0021-8979
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15720
dc.sourceIIOimport
dc.titleEffect of mechanical strain on 1/f noise in metal-oxide semiconductor field-effect transistors
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage54504
dc.source.journalJournal of Applied Physics
dc.source.issue5
dc.source.volume105
imec.availabilityPublished - open access


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