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Electrical study of sulfur passivated In0.53Ga0.47As MOS capacitor and transistor

dc.contributor.authorLin, Dennis
dc.contributor.authorWang, Wei-E
dc.contributor.authorBrammertz, Guy
dc.contributor.authorMeuris, Marc
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-18T00:04:55Z
dc.date.available2021-10-18T00:04:55Z
dc.date.issued2009
dc.identifier.issn0167-9317
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15724
dc.sourceIIOimport
dc.titleElectrical study of sulfur passivated In0.53Ga0.47As MOS capacitor and transistor
dc.typeJournal article
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorBrammertz, Guy
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecBrammertz, Guy::0000-0003-1404-7339
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage1554
dc.source.endpage1557
dc.source.journalMicroelectronic Engineering
dc.source.issue7_9
dc.source.volume86
dc.identifier.urlhttp://www.sciencedirect.com/science?_ob=ArticleURL&_udi=B6V0W-4VXB6XM-6&_user=799533&_coverDate=09%2F30%2F2009&_rdoc=11&_fmt=hi
imec.availabilityPublished - open access
imec.internalnotesINFOS 2009


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