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Study of GaN films by metalorganic chemical vapour deposition

dc.contributor.authorVan der Stricht, Wim
dc.contributor.authorMoerman, Ingrid
dc.contributor.authorDemeester, Piet
dc.contributor.authorCrawley, J. A.
dc.contributor.authorTrush, E. J.
dc.date.accessioned2021-09-29T15:38:40Z
dc.date.available2021-09-29T15:38:40Z
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1574
dc.sourceIIOimport
dc.titleStudy of GaN films by metalorganic chemical vapour deposition
dc.typeJournal article
dc.contributor.imecauthorMoerman, Ingrid
dc.contributor.imecauthorDemeester, Piet
dc.source.peerreviewno
dc.source.beginpage1
dc.source.endpage3
dc.source.journalMRS Internet Journal of Nitride Semiconductor Research
dc.source.volume1
imec.availabilityPublished - imec
imec.internalnoteshttp://nsr.mij.mrs.org/1-3


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