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Linear kink effect Lorentzians in the noise spectra of n- and p-channel fin field-effect transistors processed in standard and strained silicon-on-insulator substrates

dc.contributor.authorLukyanchikova, N.
dc.contributor.authorGarbar, N.
dc.contributor.authorKudina, V.
dc.contributor.authorSmolanka, A.
dc.contributor.authorClaeys, Cor
dc.contributor.authorSimoen, Eddy
dc.date.accessioned2021-10-18T00:18:39Z
dc.date.available2021-10-18T00:18:39Z
dc.date.issued2009
dc.identifier.issn0038-1101
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15769
dc.sourceIIOimport
dc.titleLinear kink effect Lorentzians in the noise spectra of n- and p-channel fin field-effect transistors processed in standard and strained silicon-on-insulator substrates
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage613
dc.source.endpage620
dc.source.journalSolid-State Electronics
dc.source.volume53
imec.availabilityPublished - open access


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