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On the 1/f noise of triple-gate field-effect transistors with high-k gate dielectric

dc.contributor.authorLukyanchikova, N.
dc.contributor.authorGarbar, N.
dc.contributor.authorKudina, V.
dc.contributor.authorSmolanka, A.
dc.contributor.authorPut, Sofie
dc.contributor.authorClaeys, Cor
dc.contributor.authorSimoen, Eddy
dc.date.accessioned2021-10-18T00:18:57Z
dc.date.available2021-10-18T00:18:57Z
dc.date.issued2009
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15770
dc.sourceIIOimport
dc.titleOn the 1/f noise of triple-gate field-effect transistors with high-k gate dielectric
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage32101
dc.source.journalApplied Physics Letters
dc.source.issue3
dc.source.volume95
imec.availabilityPublished - open access


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