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GaN-on-Si HEMT stress under high electric field condition

dc.contributor.authorMarcon, Denis
dc.contributor.authorLorenz, Anne
dc.contributor.authorDerluyn, Joff
dc.contributor.authorDas, Jo
dc.contributor.authorMedjdoub, Farid
dc.contributor.authorCheng, Kai
dc.contributor.authorDegroote, Stefan
dc.contributor.authorLeys, Maarten
dc.contributor.authorMertens, Robert
dc.contributor.authorGermain, Marianne
dc.contributor.authorBorghs, Gustaaf
dc.date.accessioned2021-10-18T00:35:18Z
dc.date.available2021-10-18T00:35:18Z
dc.date.issued2009
dc.identifier.issn1610-1634
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15822
dc.sourceIIOimport
dc.titleGaN-on-Si HEMT stress under high electric field condition
dc.typeJournal article
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorMertens, Robert
dc.contributor.imecauthorBorghs, Gustaaf
dc.source.peerreviewyes
dc.source.beginpageS1024
dc.source.endpageS1028
dc.source.journalPhysica Status Solidi C
dc.source.issueS2
dc.source.volume6
imec.availabilityPublished - imec


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