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Ge-based interface passivation for atomic layer deposited La-doped ZrO2

dc.contributor.authorMolle, A.
dc.contributor.authorBrammertz, Guy
dc.contributor.authorLamagna, L.
dc.contributor.authorFanciulli, M.
dc.contributor.authorMeuris, Marc
dc.contributor.authorSpiga, S.
dc.date.accessioned2021-10-18T00:55:25Z
dc.date.available2021-10-18T00:55:25Z
dc.date.issued2009
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15882
dc.sourceIIOimport
dc.titleGe-based interface passivation for atomic layer deposited La-doped ZrO2
dc.typeJournal article
dc.contributor.imecauthorBrammertz, Guy
dc.contributor.imecauthorMeuris, Marc
dc.contributor.orcidimecBrammertz, Guy::0000-0003-1404-7339
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.source.peerreviewyes
dc.source.beginpage23507
dc.source.journalApplied Physics Letters
dc.source.issue2
dc.source.volume95
dc.identifier.urlhttp://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000095000002023507000001&idtype=cvips&prog=search
imec.availabilityPublished - imec


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