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Bipolar resistive electrical switching of CuTCNQ memories incorporating a dedicated switching layer

dc.contributor.authorMuller, Robert
dc.contributor.authorKrebs, Christoph
dc.contributor.authorGoux, Ludovic
dc.contributor.authorWouters, Dirk
dc.contributor.authorGenoe, Jan
dc.contributor.authorHeremans, Paul
dc.contributor.authorSpiga, Sabina
dc.contributor.authorFanciulli, Marco
dc.date.accessioned2021-10-18T01:01:08Z
dc.date.available2021-10-18T01:01:08Z
dc.date.issued2009-06
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15899
dc.sourceIIOimport
dc.titleBipolar resistive electrical switching of CuTCNQ memories incorporating a dedicated switching layer
dc.typeJournal article
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorGenoe, Jan
dc.contributor.imecauthorHeremans, Paul
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.contributor.orcidimecGenoe, Jan::0000-0002-4019-5979
dc.contributor.orcidimecHeremans, Paul::0000-0003-2151-1718
dc.source.peerreviewyes
dc.source.beginpage620
dc.source.endpage622
dc.source.journalIEEE Electron Device Letters
dc.source.issue6
dc.source.volume30
dc.identifier.urlhttp://ieeexplore.ieee.org/xpls/abs_all.jsp?isnumber=4968003&arnumber=4915750&count=43&index=15
imec.availabilityPublished - imec


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