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Comparison of electron irradiation effects on diodes fabricated on silicon and on germanium doped silicon substrates

dc.contributor.authorOhyama, H.
dc.contributor.authorRafi, J.M.
dc.contributor.authorCampabadal, F.
dc.contributor.authorTakakura, K.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorChen, J.
dc.contributor.authorVanhellemont, J.
dc.date.accessioned2021-10-18T01:15:15Z
dc.date.available2021-10-18T01:15:15Z
dc.date.issued2009
dc.identifier.issn0921-4526
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15940
dc.sourceIIOimport
dc.titleComparison of electron irradiation effects on diodes fabricated on silicon and on germanium doped silicon substrates
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewyes
dc.source.beginpage4671
dc.source.endpage4673
dc.source.journalPhysica B: Condensed Matter
dc.source.issue23_24
dc.source.volume404
imec.availabilityPublished - imec


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