Show simple item record

Strained Si/SiGe MOS technology: improving gate dielectric integrity

dc.contributor.authorOlsen, S.H.
dc.contributor.authorYan, L.
dc.contributor.authorAgaiby, R.
dc.contributor.authorEscobedo-Cousin, A.G.
dc.contributor.authorO'Neil, A.G.
dc.contributor.authorHellstrom, P.E.
dc.contributor.authorOstling, M.
dc.contributor.authorLyutovich, K.
dc.contributor.authorKasper, E.
dc.contributor.authorClaeys, Cor
dc.contributor.authorParker, E.H.C.
dc.date.accessioned2021-10-18T01:15:57Z
dc.date.available2021-10-18T01:15:57Z
dc.date.issued2009
dc.identifier.issn0167-9317
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15942
dc.sourceIIOimport
dc.titleStrained Si/SiGe MOS technology: improving gate dielectric integrity
dc.typeJournal article
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage218
dc.source.endpage223
dc.source.journalMicroelectronic Engineering
dc.source.issue3
dc.source.volume86
imec.availabilityPublished - open access


Files in this item

Thumbnail
Name:
18906.pdf
Size:
514Kb
Format:
PDF
View/open

This item appears in the following collection(s)

Show simple item record