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Si/SiGe resonant interband tunneling diodes incorporating d-doping layers grown by chemical vapor deposition

dc.contributor.authorPark, SiYoung
dc.contributor.authorAnisha, R.
dc.contributor.authorBerger, Paul
dc.contributor.authorLoo, Roger
dc.contributor.authorNguyen, Duy
dc.contributor.authorTakeuchi, Shotaro
dc.contributor.authorCaymax, Matty
dc.date.accessioned2021-10-18T01:28:51Z
dc.date.available2021-10-18T01:28:51Z
dc.date.issued2009
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15978
dc.sourceIIOimport
dc.titleSi/SiGe resonant interband tunneling diodes incorporating d-doping layers grown by chemical vapor deposition
dc.typeJournal article
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewyes
dc.source.beginpage1173
dc.source.endpage1175
dc.source.journalIEEE Electron Device Letters
dc.source.issue11
dc.source.volume30
imec.availabilityPublished - imec


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