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Impact of silicon substrate germanium doping on diode characteristics and on thermal donor formation

dc.contributor.authorRafi, J.M.
dc.contributor.authorVanhellemont, J.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorChen, J.
dc.contributor.authorZabala, M.
dc.contributor.authorCampabadal, F.
dc.date.accessioned2021-10-18T02:04:36Z
dc.date.available2021-10-18T02:04:36Z
dc.date.issued2009
dc.identifier.issn0921-4526
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16076
dc.sourceIIOimport
dc.titleImpact of silicon substrate germanium doping on diode characteristics and on thermal donor formation
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage4723
dc.source.endpage4726
dc.source.journalPhysica B: Condensed Matter
dc.source.issue23_24
dc.source.volume404
imec.availabilityPublished - open access


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