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Extrinsic interface formation of HfO2 and Al2O3 /GeOx gate stacks on Ge (100) substrates

dc.contributor.authorSeo, F.
dc.contributor.authorBellenger, Florence
dc.contributor.authorChung, K.B.
dc.contributor.authorHoussa, Michel
dc.contributor.authorMeuris, Marc
dc.contributor.authorHeyns, Marc
dc.contributor.authorLukovsky, G.
dc.date.accessioned2021-10-18T02:53:47Z
dc.date.available2021-10-18T02:53:47Z
dc.date.issued2009
dc.identifier.issn0021-8979
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16201
dc.sourceIIOimport
dc.titleExtrinsic interface formation of HfO2 and Al2O3 /GeOx gate stacks on Ge (100) substrates
dc.typeJournal article
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage44909
dc.source.journalJournal of Applied Physics
dc.source.issue4
dc.source.volume106
imec.availabilityPublished - open access


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