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Extended-defect aspects on Ge-on-Si materials and devices

dc.contributor.authorSimoen, Eddy
dc.contributor.authorEneman, Geert
dc.contributor.authorWang, Gang
dc.contributor.authorSouriau, Laurent
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-18T03:06:53Z
dc.date.available2021-10-18T03:06:53Z
dc.date.issued2009
dc.identifier.issn0013-4651
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16230
dc.sourceIIOimport
dc.titleExtended-defect aspects on Ge-on-Si materials and devices
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorSouriau, Laurent
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecSouriau, Laurent::0000-0002-5138-5938
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpageR1
dc.source.endpageR5
dc.source.journalJournal of the Electrochemical Society
dc.source.issue2
dc.source.volume157
imec.availabilityPublished - open access


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