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Thermal and plasma enhanced atomic layer deposition of Al2O3 on GaAs substrates

dc.contributor.authorSioncke, Sonja
dc.contributor.authorDelabie, Annelies
dc.contributor.authorBrammertz, Guy
dc.contributor.authorConard, Thierry
dc.contributor.authorFranquet, Alexis
dc.contributor.authorCaymax, Matty
dc.contributor.authorUrbanczyk, Adam
dc.contributor.authorHeyns, Marc
dc.contributor.authorMeuris, Marc
dc.contributor.authorVan Hemmen, J.L.
dc.contributor.authorKeuning, Wytze
dc.contributor.authorKessels, W.M.M.
dc.date.accessioned2021-10-18T03:10:56Z
dc.date.available2021-10-18T03:10:56Z
dc.date.issued2009
dc.identifier.issn0013-4651
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16240
dc.sourceIIOimport
dc.titleThermal and plasma enhanced atomic layer deposition of Al2O3 on GaAs substrates
dc.typeJournal article
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorBrammertz, Guy
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorFranquet, Alexis
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorMeuris, Marc
dc.contributor.orcidimecBrammertz, Guy::0000-0003-1404-7339
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecFranquet, Alexis::0000-0002-7371-8852
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpageH255
dc.source.endpageH262
dc.source.journalJournal of the Electrochemical Society
dc.source.issue4
dc.source.volume156
imec.availabilityPublished - open access


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