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Velocity and mobility investigation in 1nm-EOT HfSiON on Si-(110) and (100) – does the dielectric quality matter?

dc.contributor.authorTrojman, Lionel
dc.contributor.authorPantisano, Luigi
dc.contributor.authorDehan, Morin
dc.contributor.authorFerain, Isabelle
dc.contributor.authorSeveri, Simone
dc.contributor.authorMaes, Herman
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-18T03:43:51Z
dc.date.available2021-10-18T03:43:51Z
dc.date.issued2009
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16324
dc.sourceIIOimport
dc.titleVelocity and mobility investigation in 1nm-EOT HfSiON on Si-(110) and (100) – does the dielectric quality matter?
dc.typeJournal article
dc.contributor.imecauthorSeveri, Simone
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage3009
dc.source.endpage3017
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue12
dc.source.volume56
imec.availabilityPublished - imec


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