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Experimental characterization of the subthreshold leakage current in triple-gate FinFETs

dc.contributor.authorTsormpatzoglou, A.
dc.contributor.authorDimitriadis, C.
dc.contributor.authorMouis, M.
dc.contributor.authorGhibaudo, G.
dc.contributor.authorCollaert, Nadine
dc.date.accessioned2021-10-18T03:44:41Z
dc.date.available2021-10-18T03:44:41Z
dc.date.issued2009
dc.identifier.issn0038-1101
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16326
dc.sourceIIOimport
dc.titleExperimental characterization of the subthreshold leakage current in triple-gate FinFETs
dc.typeJournal article
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.source.peerreviewyes
dc.source.beginpage359
dc.source.endpage363
dc.source.journalSolid-State Electronics
dc.source.issue3
dc.source.volume53
imec.availabilityPublished - imec


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