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Electrochemical and analytical study of the Si etching mechanism in HF

dc.contributor.authorValckx, Nick
dc.contributor.authorVos, Rita
dc.contributor.authorRip, Jens
dc.contributor.authorDoumen, Geert
dc.contributor.authorMertens, Paul
dc.contributor.authorBearda, Twan
dc.contributor.authorHeyns, Marc
dc.contributor.authorDe Gendt, Stefan
dc.date.accessioned2021-10-18T03:51:41Z
dc.date.available2021-10-18T03:51:41Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16342
dc.sourceIIOimport
dc.titleElectrochemical and analytical study of the Si etching mechanism in HF
dc.typeProceedings paper
dc.contributor.imecauthorVos, Rita
dc.contributor.imecauthorRip, Jens
dc.contributor.imecauthorDoumen, Geert
dc.contributor.imecauthorMertens, Paul
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage383
dc.source.endpage389
dc.source.conferenceCleaning and Surface Conditioning Technology in Semiconductor Device Manufacturing 11
dc.source.conferencedate4/10/2009
dc.source.conferencelocationVienna Austria
dc.identifier.urlhttp://ecsdl.org/dbt/dbt.jsp?KEY=ECSTF8&Volume=25&Issue=5
imec.availabilityPublished - open access
imec.internalnotesECS Transactions; Vol. 25, issue 5


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