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Difference in the nonlinear optical response of epitaxial Si on Ge(100) grown from SiH4 at 500°C and from Si3H8 at 350°C due to segregation of Ge

dc.contributor.authorValev, V.K.
dc.contributor.authorLeys, Frederik
dc.contributor.authorCaymax, Matty
dc.contributor.authorVerbiest, T.
dc.date.accessioned2021-10-18T03:52:04Z
dc.date.available2021-10-18T03:52:04Z
dc.date.issued2009
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16343
dc.sourceIIOimport
dc.titleDifference in the nonlinear optical response of epitaxial Si on Ge(100) grown from SiH4 at 500°C and from Si3H8 at 350°C due to segregation of Ge
dc.typeJournal article
dc.contributor.imecauthorCaymax, Matty
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage61123
dc.source.journalApplied Physics Letters
dc.source.issue6
dc.source.volume94
imec.availabilityPublished - imec


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