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Equivalent oxide thickness reduction for high-k gate stacks by optimized rare-earth silicate reactions

dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorAdelmann, Christoph
dc.contributor.authorLehnen, Peer
dc.contributor.authorDe Gendt, Stefan
dc.date.accessioned2021-10-18T04:07:24Z
dc.date.available2021-10-18T04:07:24Z
dc.date.issued2009
dc.identifier.issn1099-0062
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16381
dc.sourceIIOimport
dc.titleEquivalent oxide thickness reduction for high-k gate stacks by optimized rare-earth silicate reactions
dc.typeJournal article
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorAdelmann, Christoph
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.contributor.orcidimecAdelmann, Christoph::0000-0002-4831-3159
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.source.peerreviewyes
dc.source.beginpageG17
dc.source.endpageG19
dc.source.journalElectrochemical and Solid-State Letters
dc.source.issue5
dc.source.volume12
dc.identifier.urlhttp://www.ecsdl.org/getabs/servlet/GetabsServlet?prog=normal&id=ESLEF6000012000005000G17000001&idtype=cvips&gifs=Yes
imec.availabilityPublished - imec


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