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Investigation of intragrain defects in pc-Si layers obtained by aluminium-induced crystallization: comparison of layers made by low and high temperature epitaxy

dc.contributor.authorVan Gestel, Dries
dc.contributor.authorDogan, Pinar
dc.contributor.authorGordon, Ivan
dc.contributor.authorBender, Hugo
dc.contributor.authorLee, K.Y.
dc.contributor.authorBeaucarne, Guy
dc.contributor.authorGall, Stefan
dc.contributor.authorPoortmans, Jef
dc.date.accessioned2021-10-18T04:09:42Z
dc.date.available2021-10-18T04:09:42Z
dc.date.issued2009
dc.identifier.issn0921-5107
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16386
dc.sourceIIOimport
dc.titleInvestigation of intragrain defects in pc-Si layers obtained by aluminium-induced crystallization: comparison of layers made by low and high temperature epitaxy
dc.typeJournal article
dc.contributor.imecauthorGordon, Ivan
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.orcidimecGordon, Ivan::0000-0002-0713-8403
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.identifier.doi10.1016/j.mseb.2009.03.006
dc.source.peerreviewyes
dc.source.beginpage134
dc.source.endpage137
dc.source.journalMaterials Science and Engineering B
dc.source.volume159-160
dc.identifier.urlhttp://www.sciencedirect.com/science?_ob=ArticleURL&_udi=B6TXF-4VYW1JB-1&_user=799533&_coverDate=03%2F15%2F2009&_alid=927606698&
imec.availabilityPublished - imec


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