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Intragrain defects in polycrystalline silicon layers grown by aluminum-induced crystallization and epitaxy for thin-film solar cells

dc.contributor.authorVan Gestel, Dries
dc.contributor.authorGordon, Ivan
dc.contributor.authorBender, Hugo
dc.contributor.authorSaurel, Damien
dc.contributor.authorVanacken, Johan
dc.contributor.authorBeaucarne, Guy
dc.contributor.authorPoortmans, Jef
dc.date.accessioned2021-10-18T04:10:09Z
dc.date.available2021-10-18T04:10:09Z
dc.date.issued2009
dc.identifier.issn0021-8979
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16387
dc.sourceIIOimport
dc.titleIntragrain defects in polycrystalline silicon layers grown by aluminum-induced crystallization and epitaxy for thin-film solar cells
dc.typeJournal article
dc.contributor.imecauthorGordon, Ivan
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.orcidimecGordon, Ivan::0000-0002-0713-8403
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.source.peerreviewyes
dc.source.beginpage114507
dc.source.journalJournal of Applied Physics
dc.source.issue11
dc.source.volume105
dc.identifier.urlhttp://link.aip.org/link/?JAPIAU/105/114507/1
imec.availabilityPublished - imec


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