Show simple item record

High breakdown voltage in AlGaN/GaN/AlGaN double heterostructures grown on 4 inch Si substrates

dc.contributor.authorVisalli, Domenica
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorDerluyn, Joff
dc.contributor.authorCheng, Kai
dc.contributor.authorDegroote, Stefan
dc.contributor.authorLeys, Maarten
dc.contributor.authorGermain, Marianne
dc.contributor.authorBorghs, Gustaaf
dc.date.accessioned2021-10-18T04:58:18Z
dc.date.available2021-10-18T04:58:18Z
dc.date.issued2009
dc.identifier.issn1610-1634
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16500
dc.sourceIIOimport
dc.titleHigh breakdown voltage in AlGaN/GaN/AlGaN double heterostructures grown on 4 inch Si substrates
dc.typeJournal article
dc.contributor.imecauthorBorghs, Gustaaf
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpageS988
dc.source.endpageS991
dc.source.journalPhysica Status Solidi C
dc.source.issueS2
dc.source.volume6
imec.availabilityPublished - open access


Files in this item

Thumbnail
Name:
18281.pdf
Size:
2.898Mb
Format:
PDF
View/open

This item appears in the following collection(s)

Show simple item record