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A 1 V 23 GHz low-noise amplifier in 45 nm planar bulk-CMOS technology with high-Q above-IC inductors

dc.contributor.authorWang, W.C.
dc.contributor.authorHuang, Z.D.
dc.contributor.authorCarchon, Geert
dc.contributor.authorMercha, Abdelkarim
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorDe Raedt, Walter
dc.contributor.authorWu, C.Y.
dc.date.accessioned2021-10-18T05:09:14Z
dc.date.available2021-10-18T05:09:14Z
dc.date.issued2009
dc.identifier.issn1531-1309
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16524
dc.sourceIIOimport
dc.titleA 1 V 23 GHz low-noise amplifier in 45 nm planar bulk-CMOS technology with high-Q above-IC inductors
dc.typeJournal article
dc.contributor.imecauthorMercha, Abdelkarim
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.imecauthorDe Raedt, Walter
dc.contributor.orcidimecMercha, Abdelkarim::0000-0002-2174-6958
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.contributor.orcidimecDe Raedt, Walter::0000-0002-7117-7976
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage326
dc.source.endpage328
dc.source.journalIEEE Microwave and Wireless Components Letters
dc.source.issue5
dc.source.volume19
imec.availabilityPublished - open access


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