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Band alignment and electron traps in Y2O3 layers on (100) Si

dc.contributor.authorWang, Wan Chih
dc.contributor.authorBadylevitch, M.
dc.contributor.authorAfanasiev, Valeri
dc.contributor.authorStesmans, Andre
dc.contributor.authorAdelmann, Christoph
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorKittl, Jorge
dc.contributor.authorLukosius, M.
dc.contributor.authorWalczyk, Ch.
dc.contributor.authorWenger, Ch.
dc.date.accessioned2021-10-18T05:09:44Z
dc.date.available2021-10-18T05:09:44Z
dc.date.issued2009
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16525
dc.sourceIIOimport
dc.titleBand alignment and electron traps in Y2O3 layers on (100) Si
dc.typeJournal article
dc.contributor.imecauthorAfanasiev, Valeri
dc.contributor.imecauthorStesmans, Andre
dc.contributor.imecauthorAdelmann, Christoph
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.orcidimecAdelmann, Christoph::0000-0002-4831-3159
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.source.peerreviewyes
dc.source.beginpage132903
dc.source.journalApplied Physics Letters
dc.source.issue13
dc.source.volume95
dc.identifier.urlhttp://link.aip.org/link/?APL/95/132903
imec.availabilityPublished - imec


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