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Detailed analysis of parasitic loading effects on power performance of GaN-on-Silicon HEMTs

dc.contributor.authorXiao, Dongping
dc.contributor.authorSchreurs, Dominique
dc.contributor.authorDe Raedt, Walter
dc.contributor.authorDerluyn, Joff
dc.contributor.authorGermain, Marianne
dc.contributor.authorNauwelaers, Bart
dc.contributor.authorBorghs, Gustaaf
dc.date.accessioned2021-10-18T05:28:11Z
dc.date.available2021-10-18T05:28:11Z
dc.date.issued2009-12
dc.identifier.issn0038-1101
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16567
dc.sourceIIOimport
dc.titleDetailed analysis of parasitic loading effects on power performance of GaN-on-Silicon HEMTs
dc.typeJournal article
dc.contributor.imecauthorSchreurs, Dominique
dc.contributor.imecauthorDe Raedt, Walter
dc.contributor.imecauthorNauwelaers, Bart
dc.contributor.imecauthorBorghs, Gustaaf
dc.contributor.orcidimecDe Raedt, Walter::0000-0002-7117-7976
dc.source.peerreviewyes
dc.source.beginpage185
dc.source.endpage189
dc.source.journalSolid-State Electronics
dc.source.issue2
dc.source.volume53
imec.availabilityPublished - imec


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