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Ge-H empirical potential and simulation of Si epitaxy on Ge(100) by chemical vapor deposition from SiH4

dc.contributor.authorYang, Lijun
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorCaymax, Matty
dc.contributor.authorCeulemans, Arnout
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-18T05:30:28Z
dc.date.available2021-10-18T05:30:28Z
dc.date.issued2009
dc.identifier.issn1098-0121
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16572
dc.sourceIIOimport
dc.titleGe-H empirical potential and simulation of Si epitaxy on Ge(100) by chemical vapor deposition from SiH4
dc.typeJournal article
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage165312
dc.source.journalPhysical Review B
dc.source.volume79
imec.availabilityPublished - open access


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