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On the frequency dispersion of the capacitance-voltage behavior of epitaxial Ge on Si p+-n junctions

dc.contributor.authorYang, Rui
dc.contributor.authorEneman, Geert
dc.contributor.authorWang, Gang
dc.contributor.authorClaeys, Cor
dc.contributor.authorSimoen, Eddy
dc.date.accessioned2021-10-18T05:30:55Z
dc.date.available2021-10-18T05:30:55Z
dc.date.issued2009
dc.identifier.issn0021-8979
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16573
dc.sourceIIOimport
dc.titleOn the frequency dispersion of the capacitance-voltage behavior of epitaxial Ge on Si p+-n junctions
dc.typeJournal article
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewyes
dc.source.beginpage74511
dc.source.journalJournal of Applied Physics
dc.source.issue7
dc.source.volume106
imec.availabilityPublished - imec


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