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Ion beam synthesis of heteroepitaxial erbium silicide layers

dc.contributor.authorWu, Ming Fang
dc.contributor.authorVantomme, Andre
dc.contributor.authorPattyn, H.
dc.contributor.authorLangouche, G.
dc.contributor.authorBender, Hugo
dc.date.accessioned2021-09-29T15:55:05Z
dc.date.available2021-09-29T15:55:05Z
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1667
dc.sourceIIOimport
dc.titleIon beam synthesis of heteroepitaxial erbium silicide layers
dc.typeJournal article
dc.contributor.imecauthorVantomme, Andre
dc.contributor.imecauthorBender, Hugo
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage184
dc.source.endpage188
dc.source.journalApplied Surface Science
dc.source.volume102
imec.availabilityPublished - open access
imec.internalnotesProceedings of the International Symposium on Si Heterostructures: from Physics to Devices. Heraklion, Greece. September 1995.


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