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High FET performance for a future CMOS GeO2-based technology

dc.contributor.authorBellenger, Florence
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorMerckling, Clement
dc.contributor.authorHoussa, Michel
dc.contributor.authorPenaud, Julien
dc.contributor.authorNyns, Laura
dc.contributor.authorVrancken, Evi
dc.contributor.authorCaymax, Matty
dc.contributor.authorMeuris, Marc
dc.contributor.authorHoffmann, Thomas Y.
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-18T15:19:36Z
dc.date.available2021-10-18T15:19:36Z
dc.date.issued2010
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16727
dc.sourceIIOimport
dc.titleHigh FET performance for a future CMOS GeO2-based technology
dc.typeJournal article
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorNyns, Laura
dc.contributor.imecauthorVrancken, Evi
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.contributor.orcidimecNyns, Laura::0000-0001-8220-870X
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.source.peerreviewyes
dc.source.beginpage402
dc.source.endpage404
dc.source.journalIEEE Electron Device Letters
dc.source.issue5
dc.source.volume31
imec.availabilityPublished - imec


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