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Characterization and correction of optical proximity effects in deep-ultraviolet lithography using behavior modeling

dc.contributor.authorYen, Anthony
dc.contributor.authorTritchkov, Alexander
dc.contributor.authorStirniman, J. P.
dc.contributor.authorVandenberghe, Geert
dc.contributor.authorJonckheere, Rik
dc.contributor.authorRonse, Kurt
dc.contributor.authorVan den hove, Luc
dc.date.accessioned2021-09-29T15:57:05Z
dc.date.available2021-09-29T15:57:05Z
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1678
dc.sourceIIOimport
dc.titleCharacterization and correction of optical proximity effects in deep-ultraviolet lithography using behavior modeling
dc.typeJournal article
dc.contributor.imecauthorVandenberghe, Geert
dc.contributor.imecauthorJonckheere, Rik
dc.contributor.imecauthorRonse, Kurt
dc.contributor.imecauthorVan den hove, Luc
dc.contributor.orcidimecJonckheere, Rik::0000-0003-2211-9443
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage4175
dc.source.endpage4178
dc.source.journalJournal of Vacuum Science and Technology B
dc.source.issue6
dc.source.volume14
imec.availabilityPublished - open access
imec.internalnotes40th International Conference on Electron, Ion, Photon Beam Tech and Nanofabrication. 28-31 May 1996; Atlanta, GA, USA


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