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Electro-optical characterization of modulation-doped field-effect transistors with monolithically-integrated test fixtures

dc.contributor.authorZeng, A.
dc.contributor.authorJackson, M. K.
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorDe Raedt, Walter
dc.date.accessioned2021-09-29T15:57:52Z
dc.date.available2021-09-29T15:57:52Z
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1682
dc.sourceIIOimport
dc.titleElectro-optical characterization of modulation-doped field-effect transistors with monolithically-integrated test fixtures
dc.typeJournal article
dc.contributor.imecauthorDe Raedt, Walter
dc.source.peerreviewno
dc.source.beginpage867
dc.source.endpage874
dc.source.journalOptical and Quantum Electronics
dc.source.volume28
imec.availabilityPublished - imec


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