Very low sheet resistance AlInN/GaN HEMT grown on 100mm Si(111) by MOVPE
dc.contributor.author | Cheng, Kai | |
dc.contributor.author | Degroote, Stefan | |
dc.contributor.author | Leys, Maarten | |
dc.contributor.author | Medjdoub, Farid | |
dc.contributor.author | Derluyn, Joff | |
dc.contributor.author | Sijmus, Bram | |
dc.contributor.author | Germain, Marianne | |
dc.contributor.author | Borghs, Gustaaf | |
dc.date.accessioned | 2021-10-18T15:33:06Z | |
dc.date.available | 2021-10-18T15:33:06Z | |
dc.date.issued | 2010 | |
dc.identifier.issn | 1610-1634 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/16852 | |
dc.source | IIOimport | |
dc.title | Very low sheet resistance AlInN/GaN HEMT grown on 100mm Si(111) by MOVPE | |
dc.type | Journal article | |
dc.contributor.imecauthor | Borghs, Gustaaf | |
dc.source.peerreview | yes | |
dc.source.beginpage | 1967 | |
dc.source.endpage | 1969 | |
dc.source.journal | Physica Status Solidi C | |
dc.source.issue | 7_8 | |
dc.source.volume | 7 | |
imec.availability | Published - imec |
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