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Effect of capture and escape phenomena in Monte Carlo technique on the simulation of the nonlinear characteristics in high electron mobility transistors

dc.contributor.authorAbou-Khalil, M.
dc.contributor.authorSchreurs, Dominique
dc.contributor.authorNauwelaers, Bart
dc.contributor.authorVan Rossum, Marc
dc.contributor.authorMaciejko, R.
dc.contributor.authorWuyts, Koen
dc.date.accessioned2021-09-30T07:54:38Z
dc.date.available2021-09-30T07:54:38Z
dc.date.issued1997
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1693
dc.sourceIIOimport
dc.titleEffect of capture and escape phenomena in Monte Carlo technique on the simulation of the nonlinear characteristics in high electron mobility transistors
dc.typeJournal article
dc.contributor.imecauthorSchreurs, Dominique
dc.contributor.imecauthorNauwelaers, Bart
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage6312
dc.source.endpage18
dc.source.journalJournal of Applied Physics
dc.source.issue12
dc.source.volume82
imec.availabilityPublished - open access


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