Effect of capture and escape phenomena in Monte Carlo technique on the simulation of the nonlinear characteristics in high electron mobility transistors
dc.contributor.author | Abou-Khalil, M. | |
dc.contributor.author | Schreurs, Dominique | |
dc.contributor.author | Nauwelaers, Bart | |
dc.contributor.author | Van Rossum, Marc | |
dc.contributor.author | Maciejko, R. | |
dc.contributor.author | Wuyts, Koen | |
dc.date.accessioned | 2021-09-30T07:54:38Z | |
dc.date.available | 2021-09-30T07:54:38Z | |
dc.date.issued | 1997 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/1693 | |
dc.source | IIOimport | |
dc.title | Effect of capture and escape phenomena in Monte Carlo technique on the simulation of the nonlinear characteristics in high electron mobility transistors | |
dc.type | Journal article | |
dc.contributor.imecauthor | Schreurs, Dominique | |
dc.contributor.imecauthor | Nauwelaers, Bart | |
dc.date.embargo | 9999-12-31 | |
dc.source.peerreview | no | |
dc.source.beginpage | 6312 | |
dc.source.endpage | 18 | |
dc.source.journal | Journal of Applied Physics | |
dc.source.issue | 12 | |
dc.source.volume | 82 | |
imec.availability | Published - open access |