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Electrical nanocharacterization of copper tetracyanoquinodimethane layers dedicated to resistive random access memories

dc.contributor.authorDeleruyelle, Damien
dc.contributor.authorMuller, Christophe
dc.contributor.authorAmouroux, Julien
dc.contributor.authorMuller, Robert
dc.date.accessioned2021-10-18T15:59:23Z
dc.date.available2021-10-18T15:59:23Z
dc.date.issued2010-06
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17006
dc.sourceIIOimport
dc.titleElectrical nanocharacterization of copper tetracyanoquinodimethane layers dedicated to resistive random access memories
dc.typeJournal article
dc.source.peerreviewyes
dc.source.beginpage263504-1
dc.source.journalApplied Physics Letters
dc.source.issue26
dc.source.volume96
dc.identifier.urlhttp://dx.doi.org/10.1063/1.3458596
imec.availabilityPublished - imec


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