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Impact of selective epitaxial growth and uniaxial/biaxial strain on DIBL effect using triple FinFETs

dc.contributor.authordos Santos, S.D.
dc.contributor.authorMartino, J.A.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-18T16:06:02Z
dc.date.available2021-10-18T16:06:02Z
dc.date.issued2010
dc.identifier.issn1807-1953
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17037
dc.sourceIIOimport
dc.titleImpact of selective epitaxial growth and uniaxial/biaxial strain on DIBL effect using triple FinFETs
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage154
dc.source.endpage159
dc.source.journalJournal of Integrated Circuits and Systems
dc.source.issue2
dc.source.volume5
imec.availabilityPublished - open access


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