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High oxidation state at the epitaxial interface of g-Al2O3 thin films grown on Si(111) and Si(001)

dc.contributor.authorEl-Kazzi, Mario
dc.contributor.authorMerckling, Clement
dc.contributor.authorSaint-Girons, Guillaume
dc.contributor.authorGrenet, Genevieve
dc.contributor.authorSilly, M.
dc.contributor.authorSirotti, F.
dc.contributor.authorHollinger, Guy
dc.date.accessioned2021-10-18T16:12:12Z
dc.date.available2021-10-18T16:12:12Z
dc.date.issued2010
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17065
dc.sourceIIOimport
dc.titleHigh oxidation state at the epitaxial interface of g-Al2O3 thin films grown on Si(111) and Si(001)
dc.typeJournal article
dc.contributor.imecauthorMerckling, Clement
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage151902
dc.source.journalApplied Physics Letters
dc.source.issue15
dc.source.volume97
imec.availabilityPublished - open access


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