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On the gradual unipolar and bipolar resistive switching of TiN\HfO2\Pt memory systems

dc.contributor.authorGoux, Ludovic
dc.contributor.authorChen, Yangyin
dc.contributor.authorPantisano, Luigi
dc.contributor.authorWang, Xin Peng
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorJurczak, Gosia
dc.contributor.authorWouters, Dirk
dc.date.accessioned2021-10-18T16:39:32Z
dc.date.available2021-10-18T16:39:32Z
dc.date.issued2010
dc.identifier.issn1099-0062
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17173
dc.sourceIIOimport
dc.titleOn the gradual unipolar and bipolar resistive switching of TiN\HfO2\Pt memory systems
dc.typeJournal article
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorChen, Yangyin
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.source.peerreviewyes
dc.source.beginpageG54
dc.source.endpageG56
dc.source.journalElectrochemical and Solid-State Letters
dc.source.issue6
dc.source.volume13
imec.availabilityPublished - imec


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