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Time-dependent defect spectroscopy for characterization of border traps in metal-oxide-semiconductor transistors

dc.contributor.authorGrasser, Tibor
dc.contributor.authorReisinger, Hans
dc.contributor.authorWagner, Paul-Jurgen
dc.contributor.authorKaczer, Ben
dc.date.accessioned2021-10-18T16:43:01Z
dc.date.available2021-10-18T16:43:01Z
dc.date.issued2010-12
dc.identifier.issn1098-0121
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17185
dc.sourceIIOimport
dc.titleTime-dependent defect spectroscopy for characterization of border traps in metal-oxide-semiconductor transistors
dc.typeJournal article
dc.contributor.imecauthorKaczer, Ben
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage245318
dc.source.journalPhysical Review B
dc.source.issue24
dc.source.volume82
imec.availabilityPublished - open access


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