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Electrical TCAD simulation of a germanium pMOSFET technology

dc.contributor.authorHellings, Geert
dc.contributor.authorEneman, Geert
dc.contributor.authorKrom, Raymond
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorMitard, Jerome
dc.contributor.authorDe Keersgieter, An
dc.contributor.authorHoffmann, Thomas Y.
dc.contributor.authorMeuris, Marc
dc.contributor.authorDe Meyer, Kristin
dc.date.accessioned2021-10-18T16:59:12Z
dc.date.available2021-10-18T16:59:12Z
dc.date.issued2010
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17244
dc.sourceIIOimport
dc.titleElectrical TCAD simulation of a germanium pMOSFET technology
dc.typeJournal article
dc.contributor.imecauthorHellings, Geert
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorDe Keersgieter, An
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecHellings, Geert::0000-0002-5376-2119
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecDe Keersgieter, An::0000-0002-5527-8582
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage2539
dc.source.endpage2546
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue10
dc.source.volume57
imec.availabilityPublished - open access


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