Integrating high-k /metal gates: gate-first or gate-last?
| dc.contributor.author | Hoffmann, Thomas Y. | |
| dc.date.accessioned | 2021-10-18T17:06:34Z | |
| dc.date.available | 2021-10-18T17:06:34Z | |
| dc.date.issued | 2010-03 | |
| dc.identifier.issn | 0038-111X | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/17268 | |
| dc.source | IIOimport | |
| dc.title | Integrating high-k /metal gates: gate-first or gate-last? | |
| dc.type | Journal article | |
| dc.source.peerreview | no | |
| dc.source.beginpage | 20 | |
| dc.source.journal | Solid State Technology | |
| dc.source.issue | 3 | |
| dc.source.volume | 53 | |
| dc.identifier.url | http://www.electroiq.com/index/display/semiconductors-article-display/2809542897/articles/solid-state-technology/volume-53/issue | |
| imec.availability | Published - imec |
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