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Defining a 'charge vector' and its use in the treatment of the short channel effect in deep submicron MOSFETs

dc.contributor.authorBiesemans, Serge
dc.contributor.authorDe Meyer, Kristin
dc.date.accessioned2021-09-30T07:57:04Z
dc.date.available2021-09-30T07:57:04Z
dc.date.issued1997
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1738
dc.sourceIIOimport
dc.titleDefining a 'charge vector' and its use in the treatment of the short channel effect in deep submicron MOSFETs
dc.typeJournal article
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.imecauthorDe Meyer, Kristin
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage95
dc.source.endpage102
dc.source.journalSolid State Electronics
dc.source.issue1
dc.source.volume41
imec.availabilityPublished - open access


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