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Oxygen incorporation in TiN for metal gate work function tuning with a replacement gate integration approach

dc.contributor.authorLi, Zilan
dc.contributor.authorSchram, Tom
dc.contributor.authorWitters, Thomas
dc.contributor.authorTseng, Joshua
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorDe Meyer, Kristin
dc.date.accessioned2021-10-18T18:17:09Z
dc.date.available2021-10-18T18:17:09Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17491
dc.sourceIIOimport
dc.titleOxygen incorporation in TiN for metal gate work function tuning with a replacement gate integration approach
dc.typeJournal article
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorWitters, Thomas
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecSchram, Tom::0000-0003-1533-7055
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage1805
dc.source.endpage1807
dc.source.journalMicroelectronic engineering
dc.source.volume87
imec.availabilityPublished - open access


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