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Electrical demonstration of thermally stable Ni silicides on Si1-xCx epitaxial layers

dc.contributor.authorMachkaoutsan, Vladimir
dc.contributor.authorVerheyen, Peter
dc.contributor.authorBauer, M.
dc.contributor.authorZhang, Y.
dc.contributor.authorKoelling, Sebastian
dc.contributor.authorFranquet, Alexis
dc.contributor.authorVanormelingen, Koen
dc.contributor.authorLoo, Roger
dc.contributor.authorKim, C.S.
dc.contributor.authorLauwers, Anne
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorKerner, Christoph
dc.contributor.authorHoffmann, Thomas
dc.contributor.authorGranneman, E.
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorAbsil, Philippe
dc.contributor.authorThomas, S.G.
dc.date.accessioned2021-10-18T18:35:44Z
dc.date.available2021-10-18T18:35:44Z
dc.date.issued2010
dc.identifier.issn0167-9317
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17543
dc.sourceIIOimport
dc.titleElectrical demonstration of thermally stable Ni silicides on Si1-xCx epitaxial layers
dc.typeJournal article
dc.contributor.imecauthorMachkaoutsan, Vladimir
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorFranquet, Alexis
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorLauwers, Anne
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorKerner, Christoph
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.orcidimecFranquet, Alexis::0000-0002-7371-8852
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage306
dc.source.endpage310
dc.source.journalMicroelectronic Engineering
dc.source.issue3
dc.source.volume87
dc.identifier.urlhttp://dx.doi.org/10.1016/j.mee.2009.06.019
imec.availabilityPublished - open access


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