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Excellent stability of GaN-on-Si high electron mobility transistors with 5 μm gate/drain spacing tested in off-state at a record drain voltage of 200 V and 200 °C

dc.contributor.authorMarcon, Denis
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorVisalli, Domenica
dc.contributor.authorDerluyn, Joff
dc.contributor.authorDas, Jo
dc.contributor.authorMedjdoub, Farid
dc.contributor.authorDegroote, Stefan
dc.contributor.authorLeys, Maarten
dc.contributor.authorCheng, Kai
dc.contributor.authorMertens, Robert
dc.contributor.authorGermain, Marianne
dc.contributor.authorBorghs, Gustaaf
dc.date.accessioned2021-10-18T18:46:46Z
dc.date.available2021-10-18T18:46:46Z
dc.date.issued2010
dc.identifier.issn0021-4922
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17573
dc.sourceIIOimport
dc.titleExcellent stability of GaN-on-Si high electron mobility transistors with 5 μm gate/drain spacing tested in off-state at a record drain voltage of 200 V and 200 °C
dc.typeJournal article
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorMertens, Robert
dc.contributor.imecauthorBorghs, Gustaaf
dc.source.peerreviewyes
dc.source.beginpage04DF07
dc.source.journalJapanese Journal of Applied Physics
dc.source.issue4
dc.source.volume49
dc.identifier.urlhttp://jjap.ipap.jp/link?JJAP/49/04DF07/
imec.availabilityPublished - imec


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