Low on-resistance high-breakdown normally off AlN/GaN/AlGaN DHFET on Si substrate
dc.contributor.author | Medjdoub, Farid | |
dc.contributor.author | Derluyn, Joff | |
dc.contributor.author | Cheng, Kai | |
dc.contributor.author | Leys, Maarten | |
dc.contributor.author | Degroote, Stefan | |
dc.contributor.author | Marcon, Denis | |
dc.contributor.author | Visalli, Domenica | |
dc.contributor.author | Van Hove, Marleen | |
dc.contributor.author | Germain, Marianne | |
dc.contributor.author | Borghs, Gustaaf | |
dc.date.accessioned | 2021-10-18T18:58:32Z | |
dc.date.available | 2021-10-18T18:58:32Z | |
dc.date.issued | 2010 | |
dc.identifier.issn | 0741-3106 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/17606 | |
dc.source | IIOimport | |
dc.title | Low on-resistance high-breakdown normally off AlN/GaN/AlGaN DHFET on Si substrate | |
dc.type | Journal article | |
dc.contributor.imecauthor | Marcon, Denis | |
dc.contributor.imecauthor | Borghs, Gustaaf | |
dc.source.peerreview | yes | |
dc.source.beginpage | 111 | |
dc.source.endpage | 113 | |
dc.source.journal | IEEE Electron Device Letters | |
dc.source.issue | 2 | |
dc.source.volume | 31 | |
dc.identifier.url | http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5378574 | |
imec.availability | Published - imec |
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