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Novel E-mode GaN-on-Si MOSHEMT using a selective thermal oxidation

dc.contributor.authorMedjdoub, Farid
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorCheng, Kai
dc.contributor.authorMarcon, Denis
dc.contributor.authorLeys, Maarten
dc.contributor.authorDecoutere, Stefaan
dc.date.accessioned2021-10-18T19:00:30Z
dc.date.available2021-10-18T19:00:30Z
dc.date.issued2010
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17611
dc.sourceIIOimport
dc.titleNovel E-mode GaN-on-Si MOSHEMT using a selective thermal oxidation
dc.typeJournal article
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.source.peerreviewyes
dc.source.beginpage948
dc.source.endpage950
dc.source.journalIEEE Electron Device Letters
dc.source.issue9
dc.source.volume31
imec.availabilityPublished - imec


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