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Interface analysis of Ge ultra thin layers intercalated between GaAs substrates and oxide stacks

dc.contributor.authorMolle, Alessandro
dc.contributor.authorLamagna, Luca
dc.contributor.authorSpiga, Sabina
dc.contributor.authorFanciulli, Marco
dc.contributor.authorBrammertz, Guy
dc.contributor.authorMeuris, Marc
dc.date.accessioned2021-10-18T19:16:35Z
dc.date.available2021-10-18T19:16:35Z
dc.date.issued2010
dc.identifier.issn0040-6090
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17650
dc.sourceIIOimport
dc.titleInterface analysis of Ge ultra thin layers intercalated between GaAs substrates and oxide stacks
dc.typeJournal article
dc.contributor.imecauthorBrammertz, Guy
dc.contributor.imecauthorMeuris, Marc
dc.contributor.orcidimecBrammertz, Guy::0000-0003-1404-7339
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.source.peerreviewyes
dc.source.beginpageS123
dc.source.endpageS127
dc.source.journalThin Solid Films
dc.source.issue6, Suppl. 1
dc.source.volume518
dc.identifier.urlhttp://www.sciencedirect.com/science?_ob=ArticleURL&_udi=B6TW0-4XGPKGB-3&_user=799533&_coverDate=10%2F19%2F2009&_alid=1057327845
imec.availabilityPublished - imec
imec.internalnotes6th Int. Conf. Silicon Epitaxy and Heterostructures


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