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Observation of a paramagnetic defect at the epitaxial Ge3N4/(111)Ge interface by electron spin resonance

dc.contributor.authorNguyen, Ahn P. D.
dc.contributor.authorStesmans, Andre
dc.contributor.authorAfanasiev, Valeri
dc.contributor.authorLieten, Ruben
dc.contributor.authorBorghs, Gustaaf
dc.date.accessioned2021-10-18T19:31:33Z
dc.date.available2021-10-18T19:31:33Z
dc.date.issued2010
dc.identifier.issn0040-6090
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17688
dc.sourceIIOimport
dc.titleObservation of a paramagnetic defect at the epitaxial Ge3N4/(111)Ge interface by electron spin resonance
dc.typeJournal article
dc.contributor.imecauthorStesmans, Andre
dc.contributor.imecauthorAfanasiev, Valeri
dc.contributor.imecauthorLieten, Ruben
dc.contributor.imecauthorBorghs, Gustaaf
dc.source.peerreviewyes
dc.source.beginpage2361
dc.source.endpage2364
dc.source.journalThin Solid Films
dc.source.issue9
dc.source.volume518
dc.identifier.urlhttp://dx.doi.org/10.1016/j.tsf.2009.09.181
imec.availabilityPublished - imec
imec.internalnotesE-MRS 2009 Spring Meeting Symposium I: Silicon and germanium issue for future CMOS devices


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