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TEM analysis of Si-passivated Ge-on-Si MOSFET structures for high performance PMOS device technology

dc.contributor.authorNorris, D.J.
dc.contributor.authorRoss, I.M.
dc.contributor.authorCullis, A.G.
dc.contributor.authorWalther, T.
dc.contributor.authorMyronov, M.
dc.contributor.authorDobbie, A.
dc.contributor.authorWhall, T.
dc.contributor.authorParker, E.H.C.
dc.contributor.authorLeadley, D.R.
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorLee, Willie
dc.contributor.authorMeuris, Marc
dc.date.accessioned2021-10-18T19:40:23Z
dc.date.available2021-10-18T19:40:23Z
dc.date.issued2010
dc.identifier.issn1742-6588
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17709
dc.sourceIIOimport
dc.titleTEM analysis of Si-passivated Ge-on-Si MOSFET structures for high performance PMOS device technology
dc.typeJournal article
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorMeuris, Marc
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage12044
dc.source.journalJournal of Physics Conference Series
dc.source.issue1
dc.source.volume241
imec.availabilityPublished - open access
imec.internalnotesElectron Microscopy and Analysis Group Conference - EMAG 2009


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